Observation of SrTi O3 in-gap states by depletion mode field effect

Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

  Shibuya, Keisuke ^a,b   Ohnishi, Tsuyoshi ^a   Uozumi, Takayuki ^a,c   Sato, Taisuke ^a,d   Nishio, Kazunori ^a   Lippmaa, Mikk ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Canon Corporation

^d TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN VACANCIES; SINGLE CRYSTALS; STRONTIUM COMPOUNDS;

DEPLETION MODE FIELD EFFECT; FIELD EFFECT MOBILITY; GATE INSULATOR LAYERS; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 38549180317     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837627     Document Type: Article

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