Growth and characterization of epitaxial DyScO3 films on SrTiO3

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 29-32, 2006, Pages

  Uozumi, Takayuki ^a   Shibuya, Keisuke ^a   Ohnishi, Tsuyoshi ^a   Sato, Taisuke ^a   Lippmaa, Mikk ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

CaHfO3; DyScO 3; Field effect transistor; Gate insulator; Hafnate; Oxide electronics; Scandate; SrTiO3 substrate; Wide gap insulator

Indexed keywords

DYSPROSIUM COMPOUNDS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; INSULATING MATERIALS; STRONTIUM COMPOUNDS; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

BREAKDOWN FIELDS; GATE INSULATORS; WIDE-GAP INSULATORS;

EPITAXIAL FILMS;

EID: 34548580054     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L830     Document Type: Article

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