The effect of annealing on SrTiO3 field-effect transistor devices

Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 195-199

  Shibuya, Keisuke ^a   Ohnishi, Tsuyoshi ^a,b   Uozumi, Takayuki ^a   Lippmaa, Mikk ^a,b   Koinuma, Hideomi ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b Combinatorial Materials Exploration and Technology ^*  (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Field effect; Interfaces; Titanium oxide

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHARGE TRANSFER; PERMITTIVITY; PULSED LASER DEPOSITION; SINGLE CRYSTALS; THIN FILMS; TITANIUM OXIDES;

ABLATION PLUME; DRAIN ELECTRODES; INTERFACE CONDUCTIVITY; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 21844444552     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.222     Document Type: Conference Paper

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