Effect of an organic inhibitor in high pH chemical rinse on the platen for Cu-CMP

Solid State Phenomena

Volumn 134, Issue , 2008, Pages 299-302

  Petitdidier, Sébastien ^a   Bartosh, Kyle ^b   Trouiller, Chantal ^a   Couvrat, Alexandre ^c   Liu, Jun ^b   Zaleski, Mark ^d  

^a STMICROELECTRONICS   (France)

^b ATMI   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

^d FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

BTA; Cu CMP; Inhibitor; Post CMP clean; TOF SIMS

Indexed keywords

EID: 38549167474     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.134.299     Document Type: Conference Paper

References (10)

1. Z. G. Song, S. P. Neo, C. K. Oh, S. Redkar, and Y. P. Lee: Proc. 11th Int. Symp. on Phys. and Failure Analysis of ICs (IPFA) (2004), p. 71.
2. Y. Homma, S. Kondo, N. Sakuma, K. Hinode, J. Noguchi, N. Ohashi, H. Yamaguchi, and N. Owada: J. Electrochem. Soc. 147 (3) (2000), p. 1193.
3. A. Beverina, H. Bernard, J. Palleau. J. Torres, and F. Tardif: Electrochemical and Solid-State Letters., 3(3) (2000), p. 156.
4. J. Noguchi, N. Konishi and Y. Yamada: IEEE Trans. Elect. Dev. 52(5) (2005), p. 934.
5. V. Brusic, M. A. Frisch, B. N. Eldridge, F. P. Novak, F. B. Kaufman, B. M. Rush and G. S. Frankel: J. Electrochem. Soc. 138(8) (1991), p. 2253.
6. A. Nishi, M. Sado, T. Miki and Y. Fukui: Appl. Surf. Sci. 203-204 (2003), p. 470-472.
7. A. T. Al-Hinai and K. Osseo-Asare: Electrochemical and Solid-State Letters 6 (5) (2003), p. B23.
8. S. Tamilmani, W. Huang, S. Raghavan, and R. Small: J. Electrochem. Soc. 149(12) (2002), p. G638.
9. S. Deshpande, S. C. Kuiry, M. Klimov, Y. Obeng, and S. Seal: J. Electrochem. Soc. 151(11) (2004), p. G788.
10. S. Deshpande, S. C. Kuiry, M. Klimov and S. Seal: Electrochemical and Solid state Letters 8(4) (2005), p. G98.