Transient simulations of a rapid thermal processing apparatus

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 4, 2007, Pages 1082-1086

  Logerais, P O ^a   Chapron, D ^b   Bouteville, A ^b  

^a Arts et Metiers ParisTech   (France)

^b Annealsys   (France)

Author keywords

Numerical simulation; Quartz window; Rapid thermal processing; RTP; Wafer temperature uniformity

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; HEAT RADIATION; NUMERICAL METHODS; NUMERICAL MODELS; PROCESSING; QUARTZ; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICIDES; SILICON WAFERS; TEMPERATURE CONTROL;

CHEMICAL VAPOUR DEPOSITION; QUARTZ WINDOWS; RADIATIVE HEAT TRANSFER EQUATION; SILICIDE FORMATION; TRANSIENT SIMULATION; TRANSIENT STATE; WAFER TEMPERATURE; WAFER TEMPERATURE PROFILE;

MONTE CARLO METHODS;

EID: 38549118444     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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