Post BF2+ implant annealing using single wafer rapid thermal furnace

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2004

Volumn , Issue , 2004, Pages 129-134

  Fukada, Takashi ^a   Woo, Sik Yoo ^a  

^a WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CONCENTRATION (PROCESS); DESORPTION; ELECTRIC RESISTANCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TEMPERATURE DISTRIBUTION;

DOPANT CONCENTRATION; RAPID THERMAL FURNACE; SHEET RESISTANCE;

BORON;

EID: 28344457408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. F. A. Trumbore, "Solid Solubilities of Impurity Elements in Germanium and Silicon", Bell Syst. Tech. J., 39, 205 (1960)
2. S.M. Sze, "Physics of Semiconductor Devices", Fig.21 p.32, Wiley Interscience, Second Edition