A study of the Dii defect after electron irradiation and annealing of 4H SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 319-322

  Sullivan, W ^a   Steeds, J W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Carbon interstitials; DII; Electron irradiation; Local vibrational modes; PL

Indexed keywords

DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

ELECTRON ENERGIES; HIGH TEMPERATURE; INTERSTITIALS; LOCAL VIBRATIONAL MODE; LOW ENERGY ELECTRONS; SPATIAL VARIATIONS; TEMPERATURE DEPENDENCE;

ELECTRON IRRADIATION;

EID: 38449118610     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.319     Document Type: Conference Paper

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