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Volumn 527-529, Issue PART 1, 2006, Pages 473-476
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Origin of the up-conversion process in 4H SiC
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Author keywords
Di carbon anti site; Electron irradiation; Metastable defect; Photoluminescence microscopy; Up conversion
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Indexed keywords
ANNEALING;
ELECTRON IRRADIATION;
METASTABLE PHASES;
PHONONS;
PHOTOLUMINESCENCE SPECTROSCOPY;
METASTABLE DEFECTS;
PHOTOLUMINESCENCE MICROSCOPY;
UP CONVERSION;
SILICON CARBIDE;
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EID: 37849034063
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-425-1.473 Document Type: Conference Paper |
Times cited : (6)
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References (11)
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