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Volumn 556-557, Issue , 2007, Pages 655-658
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Growth and properties of gadolinium oxide dielectric layers on silicon carbide for high-k application
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Author keywords
C V; High k dielectrics; I V; MBE; Rare earth metal oxide; XPS; XRD
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Indexed keywords
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EID: 38449118185
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-442-1.655 Document Type: Conference Paper |
Times cited : (4)
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References (13)
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