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Volumn 556-557, Issue , 2007, Pages 655-658

Growth and properties of gadolinium oxide dielectric layers on silicon carbide for high-k application

Author keywords

C V; High k dielectrics; I V; MBE; Rare earth metal oxide; XPS; XRD

Indexed keywords


EID: 38449118185     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.655     Document Type: Conference Paper
Times cited : (4)

References (13)
  • 7
    • 33746531190 scopus 로고    scopus 로고
    • A. Fissel, M. Czernohorsky and H.J. Osten: J. Vac. Sci. Technol. B 24 (2006), p. 2115; Superlattice and Microstructures 41 (2006), in press
    • A. Fissel, M. Czernohorsky and H.J. Osten: J. Vac. Sci. Technol. B Vol. 24 (2006), p. 2115; Superlattice and Microstructures Vol. 41 (2006), in press
  • 9
    • 0038402418 scopus 로고    scopus 로고
    • A. Fissel, Phys. Rep. Vol. 379 (2003), p 149
    • (2003) Phys. Rep , vol.379 , pp. 149
    • Fissel, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.