Deep levels in electron-irradiated n- and p-type 4H-SiC investigated by deep level transient spectroscopy

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 331-334

  Danno, Katsunori ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deep levels; DLTS; Electron irradiation; Electron trap; Hole trap; Intrinsic defect

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ELECTRONS; HOLE TRAPS; SILICON CARBIDE;

CARBON VACANCY; DEEP-LEVELS; ELECTRON FLUENCES; INTRINSIC DEFECTS; LOW ENERGY ELECTRON IRRADIATION; P-TYPE 4H-SIC; THERMALLY STABLE; TRAP CONCENTRATION;

ELECTRON IRRADIATION;

EID: 38449115875     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.331     Document Type: Conference Paper

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