|
Volumn 556-557, Issue , 2007, Pages 375-378
|
Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes
|
Author keywords
4H SiC diodes; Carrier lifetime temperature dependence; Reverse recovery charge; Reverse recovery experiments; Reverse recovery simulations
|
Indexed keywords
CARRIER LIFETIME;
DIODES;
RECOVERY;
TEMPERATURE DISTRIBUTION;
UNCERTAINTY ANALYSIS;
DRIFT DIFFUSION;
HIGH TEMPERATURE RANGE;
LIFE-TIME DISTRIBUTION;
QUADRATIC DEPENDENCE;
REVERSE RECOVERY;
REVERSE RECOVERY CHARGE;
SIC DIODES;
TEMPERATURE DEPENDENCE;
SILICON CARBIDE;
|
EID: 38449112353
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.556-557.375 Document Type: Conference Paper |
Times cited : (9)
|
References (13)
|