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Volumn 556-557, Issue , 2007, Pages 375-378

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes

Author keywords

4H SiC diodes; Carrier lifetime temperature dependence; Reverse recovery charge; Reverse recovery experiments; Reverse recovery simulations

Indexed keywords

CARRIER LIFETIME; DIODES; RECOVERY; TEMPERATURE DISTRIBUTION; UNCERTAINTY ANALYSIS;

EID: 38449112353     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.375     Document Type: Conference Paper
Times cited : (9)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.