Turn-off performance of a 2.6 kV 4H-SiC asymmetrical GTO thyristor

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 743-746

  Agarwal, A K ^a   Ivanov, P A ^b   Levinshtein, M E ^b   Palmour, J W ^a   Rumyantsev, S L ^b   Ryu, S H ^a   Shur, M S ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THERMAL EFFECTS; THYRISTORS;

CARRIER LIFETIME; PULSE MEASUREMENT;

SILICON CARBIDE;

EID: 0035129730     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.743     Document Type: Article

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