Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248 nm and 157 nm photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 443-451

  Prabhu, Vivek M ^a   Wang, Michael X ^a   Jablonski, Erin L ^a   Vogt, Bryan D ^a   Lin, Eric K ^a   Wu, Wen Li ^a   Goldfarb, Darío L ^b   Angelopoulos, Marie ^b   Ito, Hiroshi ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

AFM; CD; Developer; Dissolution; LER; Polyelectrolyte; Reflectivity; Roughness; Swelling

Indexed keywords

CRITICAL DIMENSION (CD); DEVELOPERS; NEUTRON REFLECTIVITY; PHOTOACIDS;

ATOMIC FORCE MICROSCOPY; DISSOLUTION; ORGANIC SOLVENTS; OSMOSIS; POLYELECTROLYTES; REFLECTION; SILICON WAFERS; SURFACE ROUGHNESS;

PHOTORESISTS;

EID: 3843112152     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535862     Document Type: Conference Paper

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