Polyelectrolyte effects in model photoresist developer solutions: Roles of base concentration and added salts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 404-414

  Prabhu, Vivek M ^a   Jones, Ronald L ^a   Lin, Eric K ^a   Soles, Christopher L ^a   Wu, Wen Li ^a   Goldfarb, Dario L ^b   Angelopoulos, Marie ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Additives; Developer; Neutron scattering; Photoresist; Polyelectrolyte; Roughness; Solvent quality

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; COPOLYMERS; DISSOLUTION; ELECTROSTATICS; IONIC STRENGTH; MATHEMATICAL MODELS; NEUTRON SCATTERING; PH EFFECTS; POLYELECTROLYTES; SALTS; SURFACE ROUGHNESS;

CORRELATION PEAK; POLYHYDROXYSTYRENE; SMALL ANGLE NEUTRON SCATTERING; TERTBUTOXYCARBOXY PROTECTED COPOLYMERS;

PHOTORESISTS;

EID: 0141499954     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485147     Document Type: Conference Paper

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