Effect of the rinse solution to avoid 193 nm resist line collapse: A study for modification of resist polymer and process conditions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 819-829

  Masuda, Seiya ^a   Kobayashi, Masakazu ^a   Kim, Woo Kyu ^b   Anyadiegwu, Clement ^b   Padmanaban, Munirathna ^b   Dammel, Ralph R ^b   Tanaka, Keiichi ^c   Yamada, Yoshiaki ^c  

^a SÜD CHEMIE AG   (Germany)

^b CLARIANT CORPORATION   (United States)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

193 nm resist; FIRM process; Line collapse; Rinse solution

Indexed keywords

193 NM RESIST; FIRM PROCESS; LINE COLLAPSE; RINSE SOLUTION;

ASPECT RATIO; CONTACT ANGLE; ETCHING; LITHOGRAPHY; POLYMERS; SCANNING ELECTRON MICROSCOPY; SURFACE TENSION; THICKNESS MEASUREMENT;

LASER OPTICS;

EID: 3843092672     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537409     Document Type: Conference Paper

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