Architectural choices for EUV lithography masks: Patterned absorbers and patterned reflectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 1, 2004, Pages 300-310

  La Fontaine, Bruno ^a   Pawloski, Adam R ^a   Deng, Yunfei ^a,c   Chovino, Christian ^b   Dieu, Laurent ^b   Wood II, Obert R ^a   Levinson, Harry J ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b DUPONT COMPANY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Absorber stack; Etched multilayer binary mask; EUVL; Mask patterning; Process window

Indexed keywords

ABSORBER STACKS; ETCHED MULTILAYER BINARY MASK; EUVL; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); MASK PATTERNING; PROCESS WINDOW;

COMPUTER SIMULATION; ETCHING; LIGHT ABSORPTION; LIGHT REFLECTION; MASKS; MULTILAYERS; ULTRAVIOLET RADIATION;

PHOTOLITHOGRAPHY;

EID: 3843129572     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.539074     Document Type: Conference Paper

References (11)

1. See for instance: C. Chovino, L. Dieu, E. Johnstone, J. Reyes, B. La Fontaine, H.J. Levinson, A.R Pawloski, ìEUV mask making: an approach based on the direct patterning of the EUV reflectorî, Proceedings of SPIE Vol.5256, pp 566-572 (2003) C. Khan Malek, F.R. Ladan, M. Carre, R. Rivoira, ì Reactive Ion Etching of Multilayer Mirrors for X-ray Projection Lithography Masksî, Microelectronic Engineering 13, pp 283-286 (1991)
2. See for instance: C. Chovino, L. Dieu, E. Johnstone, J. Reyes, B. La Fontaine, H.J. Levinson, A.R Pawloski, ìEUV mask making: an approach based on the direct patterning of the EUV reflectorî, Proceedings of SPIE Vol.5256, pp 566-572 (2003) C. Khan Malek, F.R. Ladan, M. Carre, R. Rivoira, ì Reactive Ion Etching of Multilayer Mirrors for X-ray Projection Lithography Masksî, Microelectronic Engineering 13, pp 283-286 (1991)
3. Y. Deng, B. La Fontaine, H.J. Levinson, A.R. Neureuther, ì Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imagingî, Proceedings of SPIE Vol.5037 (2003)
4. D. Tichenor, et al., ì System Integration and Performance of the EUV Engineering Test Standî, Proceedings of SPIE Vol. 4343, pp 19-37 (2001)
5. D. OíConnell, et al., ì Lithographic Characterization of Improved Projection Optics in the EUVL Engineering Test Standî, Proceedings of SPIE Vol. 5037, pp 83-94 (2003)
6. D.A. Tichenor, W.C. Replogle, S.H. Lee, W.P. Ballard, A.H. Leung, G.D. Kubiak, L.E. Klebanoff, S. Graham, J.E.M. Goldsmith, K.L. Jefferson, J.B. Wronosky, T.G. Smith, T.A. Johnson, H. Shields, L.C. Hale, H.N. Chapman, J.S. Taylor, D.W. Sweeney, J.A. Folta, G.E. Sommargren, K.A. Goldberg, P.P. Naulleau, D.T. Attwood, E.M. Gullikson; ì Performance upgrades in the EUV engineering test standî, Proceedings of SPIE Vol. 4688, pp 72-86 (2002)
7. K.A. Goldberg, P.P. Naulleau, J. Bokor, H.N. Chapman; ì Honing the accuracy of extreme-ultraviolet optical system testing: at-wavelength and visible-light measurements of the ETS Set-2 projection opticî, Proceedings of SPIE Vol. 4688, pp. 329-337 (2002)
8. http://www.panoramictech.com/
9. EUV2D resist is available from Shipley. (http://electronicmaterials. rohmhaas.com/)
10. See for instance: S.H. Lee, D.A. Tichenor, W.P. Ballard, L.J. Bernardez II, J.E.M. Goldsmith, S.J. Haney, K.L. Jefferson, T.A> Johnson, A.H. Leung, D.J. OíConnell, W.C. Replogle, J.B. Wronosky, K.L. Blaedel, P.P. Naulleau, K.A. Goldberg, E.M. Gullikson, H.N. Chapman, S. Wurm, E.M. Panning, P.-Y. Yan, G.Zhang, J.E. Bjorkholm, G.D. Kubiak, D.W. Sweeney, D.T. Attwood, C.W. Gwyn; ì Lithographic evaluation of the EUV engineering test standî, Proceedings of SPIE Vol. 4688, pp. 266-276 (2002)
11. nd International Extreme Ultra violet Lithography Symposium (2003)