Structural and electrical properties of ultrathin HfO 2 gate oxide prepared by inductively coupled RF magnetron sputtering system

Journal of the Korean Physical Society

Volumn 45, Issue 1, 2004, Pages 166-169

  Lee, Eun Joung ^a   Choi, Won Joon ^a   Yoon, Kap Soo ^a   Yang, Jung Yup ^a   Lee, Jong Hyun ^a   Kim, Chae Ok ^a   Hong, Jin Pyo ^a  

^a Hanyang University   (South Korea)

Author keywords

HfO 2 gate oxide; MOS device

Indexed keywords

EID: 3843065430     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (15)

1. GD Wilk, RM Wallace and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. Seong-Ho Kim, Sung-Eun Kim, Joo-Han Park, Sung-Hoan Kim and Myung-Soo Kim, J. Korean Phys. Soc. 43, 868 (2003).
3. M. L. Green, E. P. Gusev, R. Degraeve and E. L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
4. H. B. Michaelson, J. Appl. Phys. 48, 4279 (1977).
5. B. Cheng, M. Cao, R. Rao, A. Inani, P. Vande Voorde and W. M. Greene, IEEE Trans. Electron Devices 46, 1537 (1999).
6. L. Kang, B. H. Lee, W. J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi and J. C. Lee, IEEE Electron Device Lett. 21 (2000).
7. B. H. Lee, L. Kang, R. Nieh and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000).
8. M. A. Quevedo-Lopez, M. El-Bouanani and B. E. Gnade, J. Appl. Phys. 92, 3540 (2002).
9. Kyu-Seong Hwang, Young-sun Jeon, Sang-Bok Kim, Chi-Kyun Kim and Jeong-Sun Oh, J. Korean Phys Soc. 43, 754 (2003).
10. H. Y. Yu, N. Wu, M. F. Li, Chunxiang Zhu and B. J. Cho, Appl. Phys. Lett. 81, 3618 (2002).
11. Y. S. Lin, R. Puthenkovilakam and J. P. Chang, Appl. Phys. Lett. 81, 2041 (2002).
12. M. Balog, M. Schieber, M. Michman and S. Patai, Thin Solid Films 41, 247 (1997).
13. M. Y. Ho and H. Gong, J. Appl. Phys. 93, 1477 (2003).
14. P. D. Kirsch, C. S. Kang and J. Lozano, J. Appl. Phys. 91, 4353 (2002).
15. D. C. Gilmer, R. Hegde, R. Cotton, R. Garcia and V. Dhandapani, Appl. Phys. Lett. 81, 1288 (2002).