-
1
-
-
0344495446
-
Narrow bandgap group III-nitride alloys
-
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, III, E. E. Haller, H. Lu, and W. J. Schaff, "Narrow bandgap group III-nitride alloys," Phys. Status. Solidi B, vol. 240, pp. 412-416, 2003.
-
(2003)
Phys. Status. Solidi B
, vol.240
, pp. 412-416
-
-
Wu, J.1
Walukiewicz, W.2
Yu, K.M.3
Ager III, J.W.4
Haller, E.E.5
Lu, H.6
Schaff, W.J.7
-
2
-
-
0032516703
-
The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
-
S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol. 281, pp. 956-961, 1998.
-
(1998)
Science
, vol.281
, pp. 956-961
-
-
Nakamura, S.1
-
3
-
-
20144389563
-
On the crystalline structure, stoichiometry and bandgap of InN thin films
-
071910
-
K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, W. Shan, J. W. Ager, III, S. X. Li, R. E. Jones, E. E. Holler, H. Lu, and W. J. Schaff, "On the crystalline structure, stoichiometry and bandgap of InN thin films," Appl. Phys. Lett., vol. 86, no. 071910, 2005.
-
(2005)
Appl. Phys. Lett
, vol.86
-
-
Yu, K.M.1
Liliental-Weber, Z.2
Walukiewicz, W.3
Shan, W.4
Ager III, J.W.5
Li, S.X.6
Jones, R.E.7
Holler, E.E.8
Lu, H.9
Schaff, W.J.10
-
4
-
-
0001519426
-
Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor
-
K. Tachibana, T. Someya, and Y. Arakawa, "Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor," Appl. Phys. Lett., vol. 74, pp. 383-385, 1999.
-
(1999)
Appl. Phys. Lett
, vol.74
, pp. 383-385
-
-
Tachibana, K.1
Someya, T.2
Arakawa, Y.3
-
5
-
-
1242308877
-
InGaN/GaN multi-quantum, dot light-emitting diodes
-
L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du, and H. Chen, "InGaN/GaN multi-quantum, dot light-emitting diodes," J. Cryst. Growth, vol. 263, pp. 114-118, 2004.
-
(2004)
J. Cryst. Growth
, vol.263
, pp. 114-118
-
-
Ji, L.W.1
Su, Y.K.2
Chang, S.J.3
Chang, C.S.4
Wu, L.W.5
Lai, W.C.6
Du, X.L.7
Chen, H.8
-
6
-
-
0034246859
-
Wet-etching fabrication of multilayer GaA1As/GaAs microtips for scanning near-field optical microscopy
-
S. Khalfallah, C. Gorecki, J. Podlecku, M. Nishioka, H. Kawakatsu, and Y. Arakawa, "Wet-etching fabrication of multilayer GaA1As/GaAs microtips for scanning near-field optical microscopy," Appl. Phys. A, vol. 71, pp. 223-225, 2000.
-
(2000)
Appl. Phys. A
, vol.71
, pp. 223-225
-
-
Khalfallah, S.1
Gorecki, C.2
Podlecku, J.3
Nishioka, M.4
Kawakatsu, H.5
Arakawa, Y.6
-
7
-
-
0036869799
-
Field emission from GaN self-organized nanotips
-
Y. Terada, H. Yoshida, T. Urushido, H. Miyake, and K. Hiramatsu, "Field emission from GaN self-organized nanotips," Jpn. J. Appl. Phys., vol. 41, pp. L1194-L1196, 2002.
-
(2002)
Jpn. J. Appl. Phys
, vol.41
-
-
Terada, Y.1
Yoshida, H.2
Urushido, T.3
Miyake, H.4
Hiramatsu, K.5
-
8
-
-
0242453887
-
Selective MOCVD growth of ZnO nanotips
-
Mar
-
S. Muthukumar, H. F. Sheng, J. Zhong, Z. Zhang, N. W. Emanetoglu, and Y. Lu, "Selective MOCVD growth of ZnO nanotips," IEEE Trans. Nanotechnol., vol. 2, no. 1, pp. 50-54, Mar. 2003.
-
(2003)
IEEE Trans. Nanotechnol
, vol.2
, Issue.1
, pp. 50-54
-
-
Muthukumar, S.1
Sheng, H.F.2
Zhong, J.3
Zhang, Z.4
Emanetoglu, N.W.5
Lu, Y.6
-
9
-
-
0030854137
-
Synthesis of gallium nitride nanorods through, a carbon nanotube-confined reaction
-
W. Q. Han, S. S. Fan, Q. Q. Li, and Y. D. Hu, "Synthesis of gallium nitride nanorods through, a carbon nanotube-confined reaction," Science, vol. 277, pp. 1287-1289, 1997.
-
(1997)
Science
, vol.277
, pp. 1287-1289
-
-
Han, W.Q.1
Fan, S.S.2
Li, Q.Q.3
Hu, Y.D.4
-
10
-
-
0000629502
-
Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere
-
W. Q. Han, P. Redlich, F. Ernst, and M. Rühle, "Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere," Appl. Phys. Lett., vol. 76, pp. 652-654, 2000.
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 652-654
-
-
Han, W.Q.1
Redlich, P.2
Ernst, F.3
Rühle, M.4
-
11
-
-
0035698786
-
Formation of GaN self-organized nanotips by reactive ion etching
-
H. Yoshida, T. Urushido, H. Miyake, and K. Hiramatsu, "Formation of GaN self-organized nanotips by reactive ion etching," Jpn. J. Appl. Phys., vol. 40, pp. L1301-L1304, 2001.
-
(2001)
Jpn. J. Appl. Phys
, vol.40
-
-
Yoshida, H.1
Urushido, T.2
Miyake, H.3
Hiramatsu, K.4
-
12
-
-
0001345638
-
Simple and high-yield method for synthesizing single-crystal GaN nanowires
-
C. C. Tang, S. S. Fang, H. Y. Dang, P. Li, and Y. M. Liu, "Simple and high-yield method for synthesizing single-crystal GaN nanowires," Appl. Phys. Lett., vol. 77, pp. 1961-1963, 2000.
-
(2000)
Appl. Phys. Lett
, vol.77
, pp. 1961-1963
-
-
Tang, C.C.1
Fang, S.S.2
Dang, H.Y.3
Li, P.4
Liu, Y.M.5
-
13
-
-
0038044771
-
Triangular gallium, nitride nanorods
-
S. Y. Bae, H. W. Seo, J. Park, H. Yang, H. Kim, and S. Kim, "Triangular gallium, nitride nanorods," Appl. Phys. Lett., vol. 82, pp. 4564-4566, 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 4564-4566
-
-
Bae, S.Y.1
Seo, H.W.2
Park, J.3
Yang, H.4
Kim, H.5
Kim, S.6
-
14
-
-
0037429809
-
Self-assembled vertical GaN nanorods grown by molecular-beam, epitaxy
-
L. W. Tu, C. L. Hsiao, T. W. Chi, and I. Lo, "Self-assembled vertical GaN nanorods grown by molecular-beam, epitaxy," Appl. Phys. Lett., vol. 82, pp. 1601-1603, 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 1601-1603
-
-
Tu, L.W.1
Hsiao, C.L.2
Chi, T.W.3
Lo, I.4
-
15
-
-
0036493177
-
InGaN-GaN multiquantum-well blue and green light-emitting diodes
-
Mar.-Apr
-
S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar.-Apr. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron
, vol.8
, Issue.2
, pp. 278-283
-
-
Chang, S.J.1
Lai, W.C.2
Su, Y.K.3
Chen, J.F.4
Liu, C.H.5
Liaw, U.H.6
-
16
-
-
0036661965
-
400-nm. InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
-
Jul.-Aug
-
S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400-nm. InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul.-Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron
, vol.8
, Issue.4
, pp. 744-748
-
-
Chang, S.J.1
Kuo, C.H.2
Su, Y.K.3
Wu, L.W.4
Sheu, J.K.5
Wen, T.C.6
Lai, W.C.7
Chen, J.F.8
Tsai, J.M.9
-
17
-
-
0038443548
-
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
-
Apr
-
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts," IEEE Electron Device Lett., vol. 24, no. 4, pp. 212-214, Apr. 2003.
-
(2003)
IEEE Electron Device Lett
, vol.24
, Issue.4
, pp. 212-214
-
-
Chang, S.J.1
Lee, M.L.2
Sheu, J.K.3
Lai, W.C.4
Su, Y.K.5
Chang, C.S.6
Kao, C.J.7
Chi, G.C.8
Tsai, J.M.9
-
18
-
-
0001575034
-
Self-assembling GaN quantum dots on AlxGal-xN surfaces using a surfactant
-
S. Tanaka, S. Iwai, and Y. Aoyagi, "Self-assembling GaN quantum dots on AlxGal-xN surfaces using a surfactant," Appl. Phys. Lett., vol. 69, pp. 4096-4098, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 4096-4098
-
-
Tanaka, S.1
Iwai, S.2
Aoyagi, Y.3
-
19
-
-
0000177846
-
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
-
C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, and B. Daudin, "Self-assembled InGaN quantum dots grown by molecular-beam epitaxy," Appl. Phys. Lett., vol. 76, pp. 1570-1572, 2000.
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 1570-1572
-
-
Adelmann, C.1
Simon, J.2
Feuillet, G.3
Pelekanos, N.T.4
Daudin, B.5
-
20
-
-
0037297459
-
Growth, of nanoscale InGaN self-assembled quantum dots
-
L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, and S. C. Chen, "Growth, of nanoscale InGaN self-assembled quantum dots," J. Cryst. Growth, vol. 249, pp. 144-148, 2003.
-
(2003)
J. Cryst. Growth
, vol.249
, pp. 144-148
-
-
Ji, L.W.1
Su, Y.K.2
Chang, S.J.3
Wu, L.W.4
Fang, T.H.5
Chen, J.F.6
Tsai, T.Y.7
Xue, Q.K.8
Chen, S.C.9
-
21
-
-
0001089151
-
Influence of surface stress on the equilibrium shape of strained quantum dots
-
N. Moll, M. Scheffler, and E. Pehlke, "Influence of surface stress on the equilibrium shape of strained quantum dots," Phys. Rev. B, vol. 58, pp. 4566-4571, 1998.
-
(1998)
Phys. Rev. B
, vol.58
, pp. 4566-4571
-
-
Moll, N.1
Scheffler, M.2
Pehlke, E.3
-
22
-
-
0037458415
-
Metastability of ultradense arrays of quantum dots
-
076102
-
V. A. Shchukin, D. Bimberg, T. P. Munt, and D. E. Jesson, "Metastability of ultradense arrays of quantum dots," Phys. Rev. Lett., vol. 90, no. 076102, 2003.
-
(2003)
Phys. Rev. Lett
, vol.90
-
-
Shchukin, V.A.1
Bimberg, D.2
Munt, T.P.3
Jesson, D.E.4
|