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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6481-6487

Analysis of H2-dilution effects on photochemical vapor deposition of Si thin films

(3) Oshima, Takayuki a Yamada, Akira a Konagai, Makoto a

Author keywords

Amorphous silicon; Atomic hydrogen; Calculation of radical concentration; Low temperature silicon epitaxy; Photochemical vapor deposition

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; LOW TEMPERATURE OPERATIONS; MERCURY (METAL); PHOTOCHEMICAL REACTIONS;

PHOTOCHEMICAL VAPOR DEPOSITION;

METALLIC FILMS;

EID: 0031245540 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.6481 Document Type: Article

Times cited : (21)

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