Molecular design of o-nitrobenzyl phenol ether for photo-deprotection resist; challenge to half-pitch 22 nm using near-field lithography

Journal of Photopolymer Science and Technology

Volumn 20, Issue 4, 2007, Pages 591-598

  Ito, Toshiki ^a   Terao, Akira ^a   Inao, Yasuhisa ^a   Yamaguchi, Takako ^a   Mizutani, Natsuhiko ^a  

^a CANON INC   (Japan)

Author keywords

Chemically amplified resist; Electro magnetic analysis; Near field light; o nitrobenzyl ether; Photolithography; Tri layer resist process

Indexed keywords

EID: 37549068065     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.20.591     Document Type: Article

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