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Volumn 18, Issue 3, 2005, Pages 435-441

Fabrication of sub-100 nm patterns using near-field mask lithography with ultra-thin resist process

Author keywords

Chemically amplified resist; Dry etching; Electro magnetic analysis; Near field light; Photolithography; Tri layer resist process

Indexed keywords


EID: 22144479755     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.18.435     Document Type: Article
Times cited : (21)

References (16)
  • 4
    • 22144457517 scopus 로고    scopus 로고
    • United States Patent, US 6171730
    • R. Kuroda, T. Ikeda, Y. Shimada, United States Patent, US 6171730, (1997)
    • (1997)
    • Kuroda, R.1    Ikeda, T.2    Shimada, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.