Fabrication of half-pitch 32 nm resist patterns using near-field lithography with a-Si mask

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Ito, Toshiki ^a   Yamada, Tomohiro ^a   Inao, Yasuhisa ^a   Yamaguchi, Takako ^a   Mizutani, Natsuhiko ^a   Kuroda, Ryo ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE DIFFERENCE METHOD; LITHOGRAPHY; NUMERICAL ANALYSIS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; TIME DOMAIN ANALYSIS;

ABSORBER MATERIALS; FINITE DIFFERENCES; NEAR-FIELD LITHOGRAPHY; TRILAYERS;

QUANTUM ELECTRONICS;

EID: 33746314817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2227633     Document Type: Article

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