Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects

Solid State Communications

Volumn 145, Issue 5-6, 2008, Pages 235-240

  Cui, Jie ^a   Shi, Jun jie ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. Quantum wells; A. Wurtzite semiconductors; D. Exciton phonon interactions; D. Optical properties

Indexed keywords

ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHONONS;

BUILT-IN ELECTRIC FIELD (BEF) EFFECTS; EXCITON-PHONON INTERACTIONS; WURTZITE SEMICONDUCTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 37549047567     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.11.021     Document Type: Article

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