On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 5-10

  Schlünder, Christian ^a   Brederlow, Raif ^a   Ankele, Benno ^b   Lill, Arnulf ^a   Goser, Karl ^c   Thewes, Roland ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS;

DEVICE CHARACTERISTICS; DEVICE LIFETIME; EFFECT OF STRESS; NEGATIVE BIAS; OPERATING CONDITION; RF-CIRCUITS; STANDARD CMOS PROCESS; TEMPERATURE STRESS;

MOSFET DEVICES;

EID: 84955268214     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197712     Document Type: Conference Paper

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