Molecular-beam epitaxy of Ge on GaAs(001) and Si capping

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 3057-3062

  Goldfarb, I ^a   Azar, J L ^a   Grisaru, A ^a   Grunbaum, E ^a   Nathan, M ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; ELECTRON DIFFRACTION; MIXTURES; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CAPPING LAYERS;

MOLECULAR BEAM EPITAXY;

EID: 0037349218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542656     Document Type: Article

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