112-GHz collector-up Ge/GaAs heterojunction bipolar transistors with low turn-on voltage

IEEE Transactions on Electron Devices

Volumn 43, Issue 5, 1996, Pages 670-675

  Kawanaka, Masafumi ^a,b   Iguchi, Noriyuki ^b   Sone, Jun'ichi ^b  

^a IEEE

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCY; HIGH TEMPERATURE KNUDSEN CELL; MAXIMUM OSCILLATION FREQUENCY; MOLECULAR BEAM EPITAXY SYSTEM; PYROLYTIC BORON NITRIDE; PYROLYTIC GRAPHITE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030150995     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491241     Document Type: Article

References (22)

1. D. K. Jadus and D. L. Feucht, "The realization of a GaAs-Gc wide band-gap emitter transistor," IEEE Trans. Electron Devices, vol. 16, pp. 102-107, 1969.
2. F. Tshizuka, K. Sugioka, and T. Itoh, "Active area limitation of Ge/GaAs heterojunctions by means of B ion implantation," J. Appl. Phys., vol. 59, pp. 495-498, 1986.
3. T. Kimura, M. Kawanaka, and J. Sone, "MBE-grown Ge/GaAs heterojunction bipolar transistors operated at 300°K and 77°K with current gain of 45," in Proc. 47th IEEE Device Res. Conf., Cambridge, MA, June 19-21, 1989, paper IIA-8.
4. S. Strite, M. S. Ünlü, K. Adomi, G. B. Gao, and H. Morkoç, "Al-GaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy," IEEE Electron Device Lett., vol. 11, pp. 233-235, 1990.
5. N. Chand, J. Klem, and H. Morko̧, "Pnp GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot-electron transistors," Appl. Phys. Lett., vol. 48, pp. 484-486, 1986.
6. M. Kawanaka, T. Kimura, and J. Sone, "High-gain collector-top Ge/GaAs heterojunction bipolar transistors with a base-layer fabricated by suppressing Ga atom diffusion at Ge/GaAs heterojunctions," Jpn. J. Appl. Phys., vol. 30, pp. 1659-1663, 1991.
7. H. Kroemer, "Theory of a wide-gap emitter for transistors," Proc. IRE, vol. 45, pp. 1535-1537, 1957.
8. max collector-up AlGaAs/GaAs heterojunction bipolar transistors with a heavily carbon-doped base fabricated using oxygen-ion implantation," IEEE Electron Device Lett., vol. 14, pp. 173-175, 1993.
9. Y. Matsuoka, S. Yamahata, H. Ito, and T. Ishibashi, "AlGaAs/GaAs collector-up heterojunction bipolar transistors with a carbon-doped base-layer," in Inst. Phys. Conf. Ser., vol. 112, 1990, p. 389.
10. max = 112 GHz," NEC Res. & Develop., vol. 36, pp. 165-172, 1995.
11. M. Kawanaka and J. Sone, "Current-voltage characteristics of p-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy," J. Electron. Material, vol. 19, pp. 575-580, 1990.
12. M. Dahmen, U. Rau, M. Kawanaka, J. Sone, and J. H. Werner, "Band offset variation at Ge/GaAs (100) interfaces," Appl. Phys. Lett., vol. 62, pp. 261-263, 1993.
13. max," IEEE Electron Device Lett., vol. 15, pp. 54-56, 1994.
14. M. Kawanaka and J. Sone, "Doping properties of Ge on GaAs(100) grown by MBE," J. Cryst. Growth, vol. 95, pp. 421-424, 1989.
15. T. Tatsumi, "Boron doping using compound source," Thin Solid Films, vol. 184, pp. 1-14, 1990.
16. 2 source," Appl. Phys. Lett., vol. 50, pp. 1234-1236, 1987.
17. J. D. Cressler, J. Warnock, P. J. Coane, K. N. Chiong, M. E. Rothwell, K. A. Jenkins, J. N. Burghartz, E. J. Petrillo, N. J. Mazzeo, A. C. Megdanis, F. J. Hohn, M. G. Thomson, J. Y.-C. Sun, and D. D. Tang, "A scaled 0.25-μm bipolar technology using full e-beam lithography," IEEE Electron Device Lett., vol. 13, pp. 262-264, 1992.
18. K. S. Jones and E. E. Haller, "Ion implantation of boron in germanium," J. Appl. Phys., vol. 61, pp. 2469-2477, 1987.
19. P. M. Asbeck, in High-Speed Semiconductor Devices, S. M. Sze, Ed. New York: Wiley, 1991, pp. 335-397.
20. D. R. Pehlke and D. Pavlidis, "Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2367-2373, 1992.
21. S. J. Prasad, "A method of measuring base and emitter resistances of AlGaAs/GaAs HBT's," in IEEE 1992 Bipolar Cir. and Tech. Meeting, vol. 10.2, pp. 204-207, 1992.
22. max AlGaAs/InGaAs and AlGaAs/GaAs HBT's fabricated with MOMBE selective growth in extrinsic base regions," in Proc. 51st IEEE Device Res. Conf., 1993, paper IVA-6.