High voltage and high switching frequency power-supplies using a GaN-HEMT

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 253-256

  Saito, Wataru ^a   Omura, Ichiro ^a   Domon, Tomokazu ^a   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; HEMT; High frequency; High voltage

Indexed keywords

DC GENERATORS; ELECTRIC CONDUCTIVITY; ELECTRIC POWER SUPPLIES TO APPARATUS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; OPTICAL DESIGN; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SWITCHING;

CLASS-E AMPLIFIERS; COMPOUND SEMICONDUCTOR (CS); ELECTRONICS APPLICATIONS; GAN HEMT; HIGH-FREQUENCY SWITCHING; HIGH-VOLTAGE (HV); INPUT VOLTAGES; OUTPUT POWERS; PEAK VOLTAGE; POWER EFFICIENCIES; RF POWERING; SWITCHING DEVICES;

HIGH FREQUENCY AMPLIFIERS;

EID: 37549025132     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319947     Document Type: Conference Paper

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