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Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 83-90

Defects in SiGe

(1) Larsen, Arne Nylandsted a

a AARHUS UNIVERSITY (Denmark)

Author keywords

Defects; Diffusion; E centre; Molecular beam epitaxy; SiGe

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON ALLOYS;

SILICON GERMANIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743128430 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Article

Times cited : (4)

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