Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 6, 2008, Pages 925-928

  Zhang, Panfeng ^a   Wei, Hongyuan ^a   Cong, Guangwei ^a   Hu, Weiguo ^a   Fan, Haibo ^a   Wu, JieJun ^a   Zhu, Qinsheng ^a   Liu, Xianglin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Metal organic chemical vapor deposition; Structural properties; X ray diffraction; Zinc oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; STRUCTURAL PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

DISK ROTATION RATE (DRR); METAL ORGANIC CHEMICAL VAPOR DEPOSITION; X-RAY ROCKING CURVES;

METALLIC FILMS;

EID: 37349094174     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.05.001     Document Type: Article

References (27)

1. Shimizu A., Kanbara M., Hada M., and Kasuga M. Jpn. J. Appl. Phys. 17 (1978) 1435
2. Choopun S., Vispute R.D., Noch W., Balsamo A., Sharma R.P., Venkatesan T., Iliadis A., and Look D.C. Appl. Phys. Lett. 75 (1999) 548
3. Ko H.J., Chen Y.F., Zhu Z., Yao T., Kobayashi I., and Ushiki H. Appl. Phys. Lett. 76 (2000) 1905
4. Wong E.M., and Seatson P.C. Appl. Phys. Lett. 74 (1999) 2939
5. Craciun V., Perrière J., Bassim N., Singh R.K., Craciun D., and Spear J. Appl. Phys., A Mater. Sci. Process. 69 (1999) 531
6. Johnson M.A.L., Fujita S., Rowl Jr. W.H., Hughes Jr. W.C., Cook J.W., and Schetzina J.F. J. Electron. Mater. 25 (1996) 855
7. Jae H.C., Hitoshi T., and Tomoji K. J. Cryst. Growth 226 (2001) 493
8. Park W.I., and Yi G.-C. J. Electron. Mater. 30 (2001) L32
9. Ogata K.-I., Maeima K., Fujita Sz., and Fujita Sg. J. Cryst. Growth 248 (2003) 25
10. Kim Y.J., and Kim H.J. Mater. Lett. 21 (1994) 351
11. Zhang Y., Du G., Wang X., Li W., Yang X., Ma Y., Zhao B., Yang H., Liu D., and Yang S. J. Cryst. Growth 252 (2003) 180
12. Zhang B.P., Wakatsuki K., Binh N.T., Usami N., and Segawa Y. Thin Solid Films 449 (2004) 12
13. Bang K.H., Hwang D.K., Lim S.W., and Myoung J.M. J. Cryst. Growth 250 (2003) 437
14. Pagni O., and Leitch A.W.R. Phys. Status Solidi A 201 (2004) 2213
15. Sekiguchi T., Haga K., and Inaba K. J. Cryst. Growth 214/215 (2000) 68
16. Cong G.W., Wei H.Y., Zhang P.F., Peng W.Q., Wu J.J., Liu X.L., Jiao C.M., Hu W.G., Zhu Q.S., and Wang Z.G. Appl. Phys. Lett. 87 (2005) 1
17. Fu Z.X., Lin B.X., Liao G.H., and Wu Z.Q. J. Cryst. Growth 193 (1998) 316
18. Tiwari A., Park M., Jin C., Wang H., Kumar D., and Narayan J. J. Mater. Res. 17 (2002) 2480
19. Zhu J.J., Yao R., Liu C.H., Lee I.H., Zhu L.L., Ju J.W., Baek J.H., Lin B.X., and Fu Z.X. Thin Solid Films 514 (2006) 306
20. Zuo R., Zhang H., and Liu X.L. J. Cryst. Growth 293 (2006) 498
21. Mitrovic B., Gurary A., and Kadinski L. J. Cryst. Growth 287 (2006) 656
22. Bang K.-H., Hwang D.-K., Lim S.-W., and Myoung J.-M. J. Cryst. Growth 250 (2003) 437
23. Frolov I.A., Boldyrevskii P.B., Druz B.L., and Sokolov E.B. Inorg. Mater. (Eng. Trans.) 13 (1977) 632
24. Stringfellow G.B. (1999), Academic Press, New York 297-309
25. Pier D., and Mitchell K. In: Paiz W., Wrixon G.T., and Helm P. (Eds) (1989), Kluwer Academic, Dordrecht Netherlands 488
26. Hong R.J., Shao J.D., He H.B., and Fan Z.X. J. Cryst. Growth 284 (2005) 347
27. Triboulet R., and Perrière J. Prog. Cryst. Growth Charact. Mater. 47 (2003) 65