ZnO:Zn phosphor thin films prepared by face-to-face annealing

Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 347-352

  Hong, Ruijin ^a,b   Shao, Jianda ^a   He, Hongbo ^a   Fan, Zhengxiu ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A3. Physical vapor deposition; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ABSORPTION; ANNEALING; OPACITY; OPTICAL PROPERTIES; OXIDES; PHOSPHORS; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; THIN FILMS; X RAY DIFFRACTION;

ABSORPTION MEASUREMENTS; OPTICAL BAND-GAP; SEMICONDUCTING II-VI MATERIALS; STRUCTURAL PROPERTIES;

ZINC OXIDE;

EID: 26044432717     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.029     Document Type: Article

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