On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 656-663

  Mitrovic, B ^a   Gurary, A ^a   Kadinski, L ^b  

^a Veeco Compound Semiconductor Inc   (United States)

^b SILTRONIC AG   (Germany)

Author keywords

A1. Computer simulation; A1. Convection; A1. Fluid flows; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; FLOW OF FLUIDS; HEAT CONVECTION; ORGANOMETALLICS; PROCESS CONTROL; ROTATING DISKS;

BUOYANCY-DRIVEN FLOW; ISOTHERMAL REACTORS; ORGANOMETALLIC VAPOR PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 30344459711     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.131     Document Type: Conference Paper

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