Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 126-130

  Yuan, Zhizhong ^a   Li, Dongsheng ^a   Wang, Minghua ^a   Gong, Daoren ^a   Cheng, Peihong ^a   Chen, Peiliang ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Ion implantation; PECVD; PL; Tb

Indexed keywords

CONCENTRATION (PROCESS); DANGLING BONDS; ION IMPLANTATION; LIGHT EMISSION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TERBIUM COMPOUNDS;

ANNEALING TEMPERATURE; HOST MATRIX; PL INTENSITY;

THIN FILMS;

EID: 37349072414     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.023     Document Type: Article

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