Photon and electron excitation of rare-earth-doped amorphous SiN films

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 473-476

  Zanatta, A R ^a   Ribeiro, C T M ^a   Jahn, U ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; LIGHT ABSORPTION; MICROELECTRONICS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PHOTONS; QUENCHING; RAMAN SCATTERING; RARE EARTH ELEMENTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON NITRIDE;

ELECTRON EXCITATION; NUCLEAR REACTION ANALYSES (NRA); PHOTOLUMINESCENCE SPECTRA; THERMAL ENERGY;

AMORPHOUS FILMS;

EID: 2942529015     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.022     Document Type: Conference Paper

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