Growth of 2H-SiC single crystals in a Li-based flux

Materials Letters

Volumn 62, Issue 6-7, 2008, Pages 1048-1051

  Kawamura, Fumio ^a   Ogura, Takashi ^a   Imade, Mamoru ^a   Yoshimura, Masashi ^a   Kitaoka, Yasuo ^a   Mori, Yusuke ^a   Sasaki, Takatomo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

2H SiC; Bulk; Flux; Isothermal; Single crystal; Solution

Indexed keywords

ELECTRONIC EQUIPMENT; LITHIUM COMPOUNDS; MELTING POINT; SILICON COMPOUNDS; SINGLE CRYSTALS;

ELECTRONIC DEVICES; LITHIUM FLUX; TERNARY MELT SYSTEM;

GRAIN GROWTH;

EID: 37349044614     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.07.066     Document Type: Article

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