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Volumn 237-239, Issue 1-4 II, 2002, Pages 1202-1205
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Synthesis and growth of 3C-SiC crystals from solution at 950°C
a
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Author keywords
A1. Solvents; A3. Liquid phase epitaxy; B2. Semiconducting silicon compounds
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Indexed keywords
HIGH TEMPERATURE EFFECTS;
LIQUID PHASE EPITAXY;
SEMICONDUCTING SILICON COMPOUNDS;
SOLVENTS;
SYNTHESIS (CHEMICAL);
WETTING;
X RAY DIFFRACTION ANALYSIS;
METAL SOLVENTS;
SILICON CARBIDE;
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EID: 0036530587
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02168-6 Document Type: Article |
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Times cited : (24)
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References (12)
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