Monte Carlo simulation of electron transport in 2H-SiC using a three valley analytical conduction band model

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6230-6233

  Nilsson, H E ^a   Hjelm, M ^a  

^a MID SWEDEN UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001189484     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371677     Document Type: Article

References (16)

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14. H-E. Nilsson, Results from the same Monte Carlo model as in Ref. 3, using the coupling constants for 4H-SiC presented by Mickevicius and Zhao (see Ref. 6).
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