-
1
-
-
2342621339
-
-
Farkas G, Haque S, Wall F, Martin PS, Poppe A, Van Voorst Vader Q, et al. Electric and thermal transient effects in high power optical devices. In: 20th IEEE Semitherm Symposium, 2004.
-
-
-
-
2
-
-
37249056208
-
-
Farkas G, Van Voorst Vader Q, Poppe A, Bognar G. Thermal investigation of high power optical devices by transient testing. In: Ninth therminic workshop, 24-26 September 2003, Aix-en-Provence, France.
-
-
-
-
3
-
-
37249078923
-
-
Fukuda M. Reliability and degradation of semiconductor lasers and LEDs. Artech House 1991.
-
-
-
-
6
-
-
0037197517
-
Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE materials
-
Rakovics V., Puspoki S., Balazs J., Riti I., and Frigeri C. Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE materials. Sci Eng B 91-92 (2002) 491-494
-
(2002)
Sci Eng B
, vol.91-92
, pp. 491-494
-
-
Rakovics, V.1
Puspoki, S.2
Balazs, J.3
Riti, I.4
Frigeri, C.5
-
7
-
-
0000351227
-
Temperature rise and thermal rise-time measurements of a semiconductor laser diode
-
Abdelkader H.I., Hausien H.H., and Martin J.D. Temperature rise and thermal rise-time measurements of a semiconductor laser diode. Rev Sci Instrum 63 (1992) 2004-2007
-
(1992)
Rev Sci Instrum
, vol.63
, pp. 2004-2007
-
-
Abdelkader, H.I.1
Hausien, H.H.2
Martin, J.D.3
-
8
-
-
0005445463
-
Temperature distribution along the striped active region in high-power GaAlAs visible lasers
-
Todoroki S., Sawai M., and Aiki K. Temperature distribution along the striped active region in high-power GaAlAs visible lasers. J Appl Phys 58 (1985) 1124-1128
-
(1985)
J Appl Phys
, vol.58
, pp. 1124-1128
-
-
Todoroki, S.1
Sawai, M.2
Aiki, K.3
-
9
-
-
37249046178
-
-
Epperlein PW, Proceedings of 17th international symposium of gallium arsenide and related compounds. IOP Conference Series 1990; 112:633.
-
-
-
-
10
-
-
3643058083
-
Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8-beam laser diode array
-
Murata S.I., and Nakada H. Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8-beam laser diode array. J Appl Phys 72 (1992) 2514-2516
-
(1992)
J Appl Phys
, vol.72
, pp. 2514-2516
-
-
Murata, S.I.1
Nakada, H.2
-
11
-
-
0042648451
-
Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well laser
-
Epperlein P.W., and Bona G.L. Influence of the vertical structure on the mirror facet temperatures of visible GaInP quantum well laser. Appl Phys Lett 62 (1993) 3074-3076
-
(1993)
Appl Phys Lett
, vol.62
, pp. 3074-3076
-
-
Epperlein, P.W.1
Bona, G.L.2
-
12
-
-
0001541144
-
Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe
-
Hall D.C., Goldberg L., and Mehuys D. Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe. Appl Phys Lett 61 (1992) 384-386
-
(1992)
Appl Phys Lett
, vol.61
, pp. 384-386
-
-
Hall, D.C.1
Goldberg, L.2
Mehuys, D.3
-
13
-
-
1842789944
-
A non-contact method for determining junction temperature of phosphor-converted white LEDs
-
Gu Y., and Narendran N. A non-contact method for determining junction temperature of phosphor-converted white LEDs. Proc SPIE 5187 (2004) 107-114
-
(2004)
Proc SPIE
, vol.5187
, pp. 107-114
-
-
Gu, Y.1
Narendran, N.2
-
14
-
-
9144253970
-
Measurement of temperature profiles on visible light-emitting diodes by use of nematic liquid crystal and an infrared laser
-
Park J., Shin M., and Lee C.C. Measurement of temperature profiles on visible light-emitting diodes by use of nematic liquid crystal and an infrared laser. Opt Lett 29 (2004) 2656-2658
-
(2004)
Opt Lett
, vol.29
, pp. 2656-2658
-
-
Park, J.1
Shin, M.2
Lee, C.C.3
-
15
-
-
21844446344
-
Junction temperature in light emitting diodes assessed by different methods
-
Chhajed S., Xi Y., Gessmann Th., Xi J.Q., Kim J.M., and Schubert E.F. Junction temperature in light emitting diodes assessed by different methods. Proc SPIE 5739 (2005) 16-24
-
(2005)
Proc SPIE
, vol.5739
, pp. 16-24
-
-
Chhajed, S.1
Xi, Y.2
Gessmann, Th.3
Xi, J.Q.4
Kim, J.M.5
Schubert, E.F.6
-
16
-
-
0030193644
-
Comparison of non-parabolic hydrodynamic simulations for semiconductor devices
-
Smith A.W., and Brennan K.F. Comparison of non-parabolic hydrodynamic simulations for semiconductor devices. Solid-State Electron 39 (1996) 1055-1063
-
(1996)
Solid-State Electron
, vol.39
, pp. 1055-1063
-
-
Smith, A.W.1
Brennan, K.F.2
-
17
-
-
0000925475
-
Collective resonance and form factor of homogeneous broadening in semiconductors
-
Zaitsev S.V., Yu. Gordeev N., Ya. Karachinsky L., Kopchatov V.I., Novikov I.I., Tarasov I.S., et al. Collective resonance and form factor of homogeneous broadening in semiconductors. Appl Phys Lett 76 (2000) 2514-2516
-
(2000)
Appl Phys Lett
, vol.76
, pp. 2514-2516
-
-
Zaitsev, S.V.1
Yu. Gordeev, N.2
Ya. Karachinsky, L.3
Kopchatov, V.I.4
Novikov, I.I.5
Tarasov, I.S.6
-
19
-
-
31544436360
-
Junction temperature in ultraviolet light-emitting diodes
-
Xi Y., Gessmann Th., Xi J., Kim J.K., Shah J.M., Schubert E.F., et al. Junction temperature in ultraviolet light-emitting diodes. Japanese J Appl Phys 44 (2005) 7260-7266
-
(2005)
Japanese J Appl Phys
, vol.44
, pp. 7260-7266
-
-
Xi, Y.1
Gessmann, Th.2
Xi, J.3
Kim, J.K.4
Shah, J.M.5
Schubert, E.F.6
-
20
-
-
1842638575
-
A method for projecting useful life of LED lighting systems
-
Hong E., and Narendran N. A method for projecting useful life of LED lighting systems. Proc SPIE 5187 (2004) 93-99
-
(2004)
Proc SPIE
, vol.5187
, pp. 93-99
-
-
Hong, E.1
Narendran, N.2
-
22
-
-
26644451393
-
Long-term reliability prediction of 935 nm LEDs using failure laws and low acceleration factor ageing tests
-
Deshayes Y., Bechou L., Verdier F., and Danto Y. Long-term reliability prediction of 935 nm LEDs using failure laws and low acceleration factor ageing tests. Qual Reliab Eng Int 21 (2005) 571-594
-
(2005)
Qual Reliab Eng Int
, vol.21
, pp. 571-594
-
-
Deshayes, Y.1
Bechou, L.2
Verdier, F.3
Danto, Y.4
-
24
-
-
0029698410
-
-
Itoh M, Sasaki J, Uda A, Yoneda I, Honmou H, Fukushima K. Use of AuSn solder bumps in three-dimensional passive aligned packaging of LD/PD arrays on Si optical benches. IEEE ECTC 1996. In: 46th proceedings. pp. 1-7.
-
-
-
-
25
-
-
36149004713
-
Spontaneous and stimulated recombination radiation in semiconductor
-
Lasher G., and Stern. Spontaneous and stimulated recombination radiation in semiconductor. Phys Rev A 133 (1964) 553-563
-
(1964)
Phys Rev A
, vol.133
, pp. 553-563
-
-
Lasher, G.1
Stern2
-
27
-
-
36849105149
-
Induced and spontaneous emission
-
Bergmann S.M. Induced and spontaneous emission. J Math Phys 8 (1967) 159-169
-
(1967)
J Math Phys
, vol.8
, pp. 159-169
-
-
Bergmann, S.M.1
-
29
-
-
4043115574
-
Theorical and experimental study on junction temperature of packaged fabry-perot laser diode
-
Han J.H., and Park S.W. Theorical and experimental study on junction temperature of packaged fabry-perot laser diode. IEEE Trans Dev Mat Reliab 4 (2004) 292-294
-
(2004)
IEEE Trans Dev Mat Reliab
, vol.4
, pp. 292-294
-
-
Han, J.H.1
Park, S.W.2
-
31
-
-
84879483087
-
Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal method
-
Yacoubi N., Girault B., and Fesquet J. Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal method. Appl Opt 25 (1986) 4622-4625
-
(1986)
Appl Opt
, vol.25
, pp. 4622-4625
-
-
Yacoubi, N.1
Girault, B.2
Fesquet, J.3
-
32
-
-
0016471622
-
Thermal resistance of heterostructure lasers
-
Joyce W.B., and Dixon R.W. Thermal resistance of heterostructure lasers. J Appl Phys 46 (1975) 855-862
-
(1975)
J Appl Phys
, vol.46
, pp. 855-862
-
-
Joyce, W.B.1
Dixon, R.W.2
-
33
-
-
0029309446
-
Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser
-
Morris N.A., Connolly J.C., Martinelli R.U., Abeles J.H., and Cook A.L. Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser. IEEE Photon Technol Lett 7 (1995) 455-457
-
(1995)
IEEE Photon Technol Lett
, vol.7
, pp. 455-457
-
-
Morris, N.A.1
Connolly, J.C.2
Martinelli, R.U.3
Abeles, J.H.4
Cook, A.L.5
-
34
-
-
0031095819
-
Analysis of light-emission processes in light-emitting diodes and semiconductors lasers
-
Ojeda A.M., Redondo E., Gonzalez Diaz G., and Martil I. Analysis of light-emission processes in light-emitting diodes and semiconductors lasers. Eur J Phys 18 (1997) 63-67
-
(1997)
Eur J Phys
, vol.18
, pp. 63-67
-
-
Ojeda, A.M.1
Redondo, E.2
Gonzalez Diaz, G.3
Martil, I.4
-
35
-
-
37249067302
-
-
Lucovsky G. Physics of quantum electronic. In: Conference Proceedings 1965, Ed New York: McGraw-Hill. 467pp.
-
-
-
-
36
-
-
36549104551
-
Observation of Stark shift in quantum well intersubband transitions
-
Harwit A., and Harris J.S. Observation of Stark shift in quantum well intersubband transitions. Appl Phys Lett 50 (1987) 685-687
-
(1987)
Appl Phys Lett
, vol.50
, pp. 685-687
-
-
Harwit, A.1
Harris, J.S.2
-
37
-
-
0009434466
-
Light scattering by two-dimensional electron systems in semiconductors
-
Pinczuk A., and Worlock J.M. Light scattering by two-dimensional electron systems in semiconductors. Surf Sci 113 (1982) 69
-
(1982)
Surf Sci
, vol.113
, pp. 69
-
-
Pinczuk, A.1
Worlock, J.M.2
-
38
-
-
7644234636
-
Deconvolution of optical broadening in semiconductors
-
Ren G.B., Blood P., and Rorison J.M. Deconvolution of optical broadening in semiconductors. Phys Lett A 332 (2004) 503-511
-
(2004)
Phys Lett A
, vol.332
, pp. 503-511
-
-
Ren, G.B.1
Blood, P.2
Rorison, J.M.3
-
39
-
-
0015639266
-
Electroluminescent shifting-peak spectra in GaAs with uniform excitation
-
Casey H.C., and Bachrach R.Z. Electroluminescent shifting-peak spectra in GaAs with uniform excitation. J Appl Phys 44 (1973) 2795-2804
-
(1973)
J Appl Phys
, vol.44
, pp. 2795-2804
-
-
Casey, H.C.1
Bachrach, R.Z.2
-
40
-
-
49949133713
-
Temperature dependence of the energy gap in semiconductors
-
Varshni Y.P. Temperature dependence of the energy gap in semiconductors. Physica 34 (1967) 149-154
-
(1967)
Physica
, vol.34
, pp. 149-154
-
-
Varshni, Y.P.1
-
41
-
-
0016543933
-
The standard thermodynamic function of the formation of electrons and holes in Ge, Si, GaAs and GaP
-
Thurmond C.D. The standard thermodynamic function of the formation of electrons and holes in Ge, Si, GaAs and GaP. J Electrochem Soc 122 (1975) 1133
-
(1975)
J Electrochem Soc
, vol.122
, pp. 1133
-
-
Thurmond, C.D.1
-
42
-
-
0000240162
-
Temperature dependence of the dielectric function of germanium
-
Viña L., Logothetidis S., and Cardona M. Temperature dependence of the dielectric function of germanium. Phys Rev B 30 (1984) 1979-1991
-
(1984)
Phys Rev B
, vol.30
, pp. 1979-1991
-
-
Viña, L.1
Logothetidis, S.2
Cardona, M.3
-
43
-
-
0039921930
-
Basic model relations for temperature dependencies of fundamental energy gaps in semiconductors
-
Pässler R. Basic model relations for temperature dependencies of fundamental energy gaps in semiconductors. Phys Stat Sol B 200 (1997) 155-172
-
(1997)
Phys Stat Sol B
, vol.200
, pp. 155-172
-
-
Pässler, R.1
-
44
-
-
0003589379
-
-
Science and encyclopedia publishers, Vilinius
-
Dargys A., and Kundrotas J. Handbook on physical properties of Ge, Si, GaAs and InP (1994), Science and encyclopedia publishers, Vilinius
-
(1994)
Handbook on physical properties of Ge, Si, GaAs and InP
-
-
Dargys, A.1
Kundrotas, J.2
-
45
-
-
33646424593
-
1-xAs: material parameters for use in research and device applications
-
1-xAs: material parameters for use in research and device applications. J Appl Phys 58 (1985) R1-R29
-
(1985)
J Appl Phys
, vol.58
-
-
Adachi, S.1
-
46
-
-
37249037733
-
-
Nichia Corporate. Thermal management design of LEDs. Application note (2003), LA-KSE3110C.
-
-
-
-
47
-
-
37249022582
-
-
Optek. Thermal behavior of GaAs LEDs. Application Bulletin 200, July 1989.
-
-
-
-
48
-
-
37249039238
-
-
Optoelectronics, Detectors, Isolators, Emitters. Section 6.11. In: Reliability prediction of electronic equipment. MIL-HDBK-217F, December 1991.
-
-
-
-
49
-
-
79956029939
-
Lateral current transport path, a model for GaN-based light-emitting diodes: application to practical device designs
-
Kim H. Lateral current transport path, a model for GaN-based light-emitting diodes: application to practical device designs. Appl Phys Lett 81 (2002) 1326-1328
-
(2002)
Appl Phys Lett
, vol.81
, pp. 1326-1328
-
-
Kim, H.1
|