Collective resonance and form factor of homogeneous broadening in semiconductors

Applied Physics Letters

Volumn 76, Issue 18, 2000, Pages 2514-2516

  Zaitsev, S V ^a,b,c   Gordeev, N Yu ^a   Karachinsky, L Ya ^a   Kopchatov, V I ^a   Novikov, I I ^a   Tarasov, I S ^a   Pikhtin, N A ^a   Ustinov, V M ^a   Kop'ev, P S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b The University of Texas at Austin   (United States)

^c APPLIED OPTOELECTRONICS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000925475     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126393     Document Type: Article

References (9)

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2. S. V. Zaitsev, N. Yu. Gordeev, L. Ya. Karachinsky, V. I. Kopchatov, I. I. Novikov, and P. S. Kop'ev, Jpn. J. Appl. Phys., Part 1 38, 4772 (1999).
3. S. V. Zaitsev and A. M. Georgievski, Proceedings of the International Conference SPIE on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, Kiev, 1995, p. 319.
4. R. Friedberg and S. R. Hartmann, Phys. Lett. 37A, 285 (1971).
5. R. H. Dicke, Phys Rev. 93, 99 (1954).
6. S. V. Zaitsev and A. M. Georgievski, Jpn. J. Appl. Phys., Part 1 36, 4209 (1997).
7. S. V. Zaitsev and A. M. Georgievski, Semiconductors 32, 332 (1998).
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9. Private discussion with P. Petroff (1996).