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Volumn 4, Issue 2, 2004, Pages 292-294

Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode

Author keywords

Laser reliability; Laser thermal factors; Semiconductor device packaging; Semiconductor lasers

Indexed keywords

ELECTRIC CURRENT CONTROL; HEAT RESISTANCE; INTERPOLATION; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PACKAGING; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTOR DEVICES; THERMAL CONDUCTIVITY;

EID: 4043115574     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.827834     Document Type: Article
Times cited : (18)

References (7)
  • 1
    • 0005412643 scopus 로고
    • Degradation of active region in InGaAsP/InP buried heterostructure laser
    • M. Fukuda and G. Iwane, "Degradation of active region in InGaAsP/ InP buried heterostructure laser," J. Appl. Phys., vol. 58, pp. 2932-2936, 1985.
    • (1985) J. Appl. Phys. , vol.58 , pp. 2932-2936
    • Fukuda, M.1    Iwane, G.2
  • 2
    • 0026900787 scopus 로고
    • Reliability and degradation behavior of highly coherent 1.55-μm long-cavity multiple quantum well (MQW) DFB lasers
    • Aug.
    • M. Fukuda, F. Kano, T. Kurosaki, and J. Yoshida, "Reliability and degradation behavior of highly coherent 1.55-μm long-cavity multiple quantum well (MQW) DFB lasers," J. Lightwave Technol., vol. 10, pp. 1097-1104, Aug. 1992.
    • (1992) J. Lightwave Technol. , vol.10 , pp. 1097-1104
    • Fukuda, M.1    Kano, F.2    Kurosaki, T.3    Yoshida, J.4
  • 5
    • 0000630140 scopus 로고
    • Thermal conductivity of binary, ternary, and quaternary III-V compounds
    • W. Nawaski, "Thermal conductivity of binary, ternary, and quaternary III-V compounds," J. Appl. Phys., vol. 64, pp. 159-166, 1988.
    • (1988) J. Appl. Phys. , vol.64 , pp. 159-166
    • Nawaski, W.1
  • 6
    • 0030182085 scopus 로고    scopus 로고
    • Material parameters of quaternary III-V semiconductors for multiplayer mirrors at 1.55 μm wavelength
    • M. Guden and J. Peprek, "Material parameters of quaternary III-V semiconductors for multiplayer mirrors at 1.55 μm wavelength," Modeling Simul. Mater. Sci. Eng., vol. 4, pp. 349-357, 1996.
    • (1996) Modeling Simul. Mater. Sci. Eng. , vol.4 , pp. 349-357
    • Guden, M.1    Peprek, J.2
  • 7
    • 0042331083 scopus 로고    scopus 로고
    • Overgrowth on InP corrugations for 1.55 μm DFB LD's by reduction of carrier gas flow in LPMOCVD
    • S. W. Park, C. K. Moon, J. H. Kang, Y. K. Kim, E. H. Hwang, B. J. Koo, D. Y. Kim, and J. I. Song, "Overgrowth on InP corrugations for 1.55 μm DFB LD's by reduction of carrier gas flow in LPMOCVD," J. Crystal Growth, vol. 258, pp. 26-33, 2003.
    • (2003) J. Crystal Growth , vol.258 , pp. 26-33
    • Park, S.W.1    Moon, C.K.2    Kang, J.H.3    Kim, Y.K.4    Hwang, E.H.5    Koo, B.J.6    Kim, D.Y.7    Song, J.I.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.