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Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

Conductance of Si nanowires formed by breaking Si-Si junctions

(5) Iwanari, Tomoki a Sakata, Toyo b Miyatake, Yutaka c Kurokawa, Shu a Sakai, Akira a

a KYOTO UNIVERSITY (Japan)

b Osaka Prefecture University (Japan)

c Japan Science and Technology Agency (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; SEMICONDUCTOR JUNCTIONS; SILICON;

CONDUCTANCE HISTOGRAM; SI NANOWIRES;

NANOWIRES;

EID: 37149035246 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2812563 Document Type: Article

Times cited : (8)

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