메뉴 건너뛰기




Volumn 19, Issue 24, 2007, Pages 2000-2002

DC current-induced rollover of illumination efficiency of GaN-based power LEDs

Author keywords

Current injection; Illumination efficiency; Junction temperature; Light emitting diode (LED)

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; GALLIUM NITRIDE; LIGHTING; THERMAL EFFECTS;

EID: 36849082443     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.908353     Document Type: Article
Times cited : (7)

References (13)
  • 3
    • 1342308183 scopus 로고    scopus 로고
    • Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions
    • Feb
    • C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, "Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions," IEEE Electron Device Lett., vol. 25, no. 2, pp. 61-63, Feb. 2004.
    • (2004) IEEE Electron Device Lett , vol.25 , Issue.2 , pp. 61-63
    • Huh, C.1    Schaff, W.J.2    Eastman, L.F.3    Park, S.J.4
  • 4
    • 84950118720 scopus 로고    scopus 로고
    • Thermal challenges in the future generation solid state lighting applications: Light emitting diodes
    • M. Arik, J. Petroski, and S. Weaver, "Thermal challenges in the future generation solid state lighting applications: Light emitting diodes," in Proc. IEEE Intersociety Conf. Thermal Phenomena, 2002, pp. 113-120.
    • (2002) Proc. IEEE Intersociety Conf. Thermal Phenomena , pp. 113-120
    • Arik, M.1    Petroski, J.2    Weaver, S.3
  • 5
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in gan ultraviolet light-emitting diodes using diode forward voltage method
    • Y. Xi and E. F. Schubert, "Junction-temperature measurement in gan ultraviolet light-emitting diodes using diode forward voltage method," Appl. Phys. Lett., vol. 85, no. 12, pp. 2163-2165, 2004.
    • (2004) Appl. Phys. Lett , vol.85 , Issue.12 , pp. 2163-2165
    • Xi, Y.1    Schubert, E.F.2
  • 7
    • 20444454215 scopus 로고    scopus 로고
    • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes
    • S. Chhajed, Y. Xi, Y.-L. Li, Th. Gessmann, and E. F. Schubert, "Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes," J. Appl. Phys., vol. 97, no. 5, p. 054506, 2005.
    • (2005) J. Appl. Phys , vol.97 , Issue.5 , pp. 054506
    • Chhajed, S.1    Xi, Y.2    Li, Y.-L.3    Gessmann, T.4    Schubert, E.F.5
  • 8
    • 0005445463 scopus 로고
    • Temperature distribution along the striped active region in high-power GaAlAs visible lasers
    • Aug. 1
    • S. Todoroki, M. Sawai, and K. Aiki, "Temperature distribution along the striped active region in high-power GaAlAs visible lasers," J. Appl. Phys., vol. 58, no. 3, pp. 1124-1128, Aug. 1, 1985.
    • (1985) J. Appl. Phys , vol.58 , Issue.3 , pp. 1124-1128
    • Todoroki, S.1    Sawai, M.2    Aiki, K.3
  • 9
    • 0004096435 scopus 로고    scopus 로고
    • Direct imaging of the spectral emission characteristic of an InAaN/GaN-ultra violet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
    • P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, "Direct imaging of the spectral emission characteristic of an InAaN/GaN-ultra violet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy," Appl. Phys. Lett., vol. 75, pp. 3440-3442, 1999.
    • (1999) Appl. Phys. Lett , vol.75 , pp. 3440-3442
    • Fischer, P.1    Christen, J.2    Zacharias, M.3    Schwegler, V.4    Kirchner, C.5    Kamp, M.6
  • 10
    • 4344661142 scopus 로고    scopus 로고
    • Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination
    • Jul
    • C. C. Lee and J. Park, "Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination," IEEE Photon. Technol. Lett., vol. 16, no. 7, pp. 1706-1708, Jul. 2004.
    • (2004) IEEE Photon. Technol. Lett , vol.16 , Issue.7 , pp. 1706-1708
    • Lee, C.C.1    Park, J.2
  • 11
    • 0037175972 scopus 로고    scopus 로고
    • High efficiency ingan laser diodes with an improved quantum well capping configuration
    • Nov
    • M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High efficiency ingan laser diodes with an improved quantum well capping configuration," Appl. Phys. Lett., vol. 81, pp. 4275-4277, Nov. 2002.
    • (2002) Appl. Phys. Lett , vol.81 , pp. 4275-4277
    • Hansen, M.1    Piprek, J.2    Pattison, P.M.3    Speck, J.S.4    Nakamura, S.5    DenBaars, S.P.6
  • 12
    • 82955246134 scopus 로고    scopus 로고
    • Carrier concentration and junction temperature dependencies of illumination efficiency of gan power light-emitting diodes
    • presented at the, Baltimore, MD, Paper JTuA93
    • M. P. Liao, "Carrier concentration and junction temperature dependencies of illumination efficiency of gan power light-emitting diodes," presented at the Proc. CLEO2007, Baltimore, MD, 2007, Paper JTuA93.
    • (2007) Proc. CLEO2007
    • Liao, M.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.