Carrier concentration and junction temperature dependencies of illumination efficiency of GaN Power light-emitting diodes

Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Volumn , Issue , 2007, Pages

  Liao, Michael P ^a  

^a DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; EFFICIENCY DEGRADATION; JUNCTION TEMPERATURES; POWER LED;

EFFICIENCY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PULSED LASERS;

CARRIER CONCENTRATION;

EID: 82955246134     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEO.2007.4453551     Document Type: Conference Paper

References (4)

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2. C. Huh, W. J. Schaff, L. F. Eastman, And S. J. Park, "Temperature dependence of performance of InGaN/GaN MQW LEDs with different Indium compositions," IEEE Electron Device Lett., vol. 25, no. 2, pp. 61-63, Feb. 2004.
3. M. Arik, J. Petroski, and S. Weaver," Thermal challenges in the future generation solid state lighting applications: light emitting diodes," in Proc. IEEE Intersociety Conf. Thermal Phenomena, 2002, pp.113-120.
4. Y. Xi, and E. F. Schubert, "Junction-temperature measurement in GaN ultraviolet light-emitting diodes Using Diode Forward Voltage Method," Appl. Phys. Lett., vol. 85, no. 12, pp. 2163-2165, 2004.