Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination

IEEE Photonics Technology Letters

Volumn 16, Issue 7, 2004, Pages 1706-1708

  Lee, Chin C ^a   Park, Jeong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR FILTER; CONVERSION EFFICIENCY; INDIUM GALLIUM NITRIDE; JUNCTION TEMPERATURE;

GALLIUM NITRIDE; IMAGE QUALITY; INFRARED IMAGING; LASER BEAMS; NEMATIC LIQUID CRYSTALS; NONDESTRUCTIVE EXAMINATION; OPTICAL FILTERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

LIGHT EMITTING DIODES;

EID: 4344661142     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.828361     Document Type: Article

References (7)

1. M. Arik, J. Petroski, and S. Weaver, "Thermal challenges in the future generation solid state lighting applications: Light emitting diodes," in Proc. IEEE Intersociety Conf. Thermal Phenomena, 2002, pp. 113-120.
2. M. G. Craford, "Visible Light-Emitting Diodes: Past, Present, and Very Bright Future," MRS Bulletin, vol. 25, no. 10, pp. 27-31, Oct. 2000.
3. M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, "AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress," Appl. Phys. Lett., vol. 69, pp. 898-900, 1996.
4. V. Schwegler, M. Seyboth, S. Schad, M. Scherer, C. Kirchner, M. Kamp, U. Stempfle, W. Limmer, and R. Sauer, "Temperature distribution in InGaN-MQW LED's under operation," MRS Internet J. Nitride Semicond. Res., vol. 5S1, p. W11.18, 2000.
5. P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, "Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultra violet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy," Appl. Phys. Lett., vol. 75, pp. 3440-3442, 1999.
6. J. Park, M. Shin, and C. C. Lee, "Thermal modeling and measurement of GaN-based HFET devices," IEEE Electron Device Lett., vol. 24, pp. 424-426, July 2003.
7. M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, "Precision comparison of surface temperature measurement techniques for GaAs IC's," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 16, pp. 543-549, Aug. 1993.