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Volumn 516, Issue 5, 2008, Pages 588-592

Localized oxidation influence from conductive atomic force microscope measurement on nano-scale I-V characterization of silicon thin film solar cells

Author keywords

Conductive AFM; I V characteristic; Local oxidation; Modification; Solar cells

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; MICROCRYSTALLINE SILICON; OXIDATION; THIN FILMS;

EID: 36749036057     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.198     Document Type: Article
Times cited : (11)

References (10)
  • 6
    • 0034188031 scopus 로고    scopus 로고
    • The contact diameter between an rhodium-coated cantilever and p-layer of μc-Si:H surface can be estimated at ∼ 0.5 nm according to the Hertz equation in A. Bietsch, M. Alexander Schneider, M. Bruno
    • The contact diameter between an rhodium-coated cantilever and p-layer of μc-Si:H surface can be estimated at ∼ 0.5 nm according to the Hertz equation in A. Bietsch, M. Alexander Schneider, M. Bruno. J. Vac. Sci. Technol., B 18 (2000) 1160
    • (2000) J. Vac. Sci. Technol., B , vol.18 , pp. 1160


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.