Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 491-498

  Gu, Jinhua ^a   Zhou, Yuqin ^a   Zhu, Meifang ^a   Liu, Fengzhen ^a   Liu, Jinlong ^a  

^a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A1. Atomic force microscopy; A1. Roughening; A3. Chemical vapor deposition process; B2. Semiconducting silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFUSION; HYDROGENATION; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

A1. ROUGHENING; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); SCALING EXPONENTS;

THIN FILMS;

EID: 28144462499     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.038     Document Type: Article

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