Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  Lee, Jang Uk ^a,b   Roh, Kang Seob ^a   Kang, Gu Cheol ^a   Seo, Seung Hwan ^a   Kim, Kwan Young ^a   Lee, Sunyeong ^a   Song, Kwan Jae ^a   Choi, Chang Min ^a   Park, So Ra ^a   Park, Jun Hyun ^a   Jeon, Ki Chan ^a   Kim, Dae Hwan ^a   Park, Byung Gook ^c   Lee, Jong Duk ^c   Kim, Dong Myong ^a  

^a Kookmin University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; NITRIDES; THERMAL STRESS;

CRITICAL ERROR FACTORS; ELECTRICAL STRESSES; TRAP DISTRIBUTION;

FLASH MEMORY;

EID: 36549056473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2819092     Document Type: Article

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