Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 101-103

  Kim, M S ^a   Nam, I C ^a   Kim, H T ^a   Shin, H T ^a   Kim, T E ^a   Park, H S ^a   Kim, K S ^a   Kim, K H ^a   Choi, J B ^a   Min, K S ^a   Kim, D J ^a   Kang, D W ^a   Kim, D M ^a  

^a Kookmin University   (South Korea)

Author keywords

Interface state; MOS capacitor; MOSFET; Optical method; Subbandgap photon; Subthreshold slope; Trap

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ENERGY GAP; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOSFET DEVICES; PHOTONS;

CHANNEL CONDUCTIVITY; INTERFACE STATES; SUBTHRESHOLD SLOPES;

MOS DEVICES;

EID: 10744221742     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822673     Document Type: Article

References (10)

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