Deep-depletion high-frequency capacitance-voltage responses under photonic excitation and distribution of interface states in MOS capacitors

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 1131-1134

  Kim, D M ^a,b   Song, S J ^a,b   Kim, H T ^a,b   Song, S H ^a,b   Kim, D J ^a,b   Min, K S ^a,b   Kang, D W ^a,b  

^a Kookmin University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

C V; Deep depletion; Interface states; MOS capacitor; Photonic characterization

Indexed keywords

CAPACITANCE; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS);

PHOTONIC EXCITATION;

MOS CAPACITORS;

EID: 0038494597     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812096     Document Type: Review

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