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Volumn 43, Issue 24, 2007, Pages 1392-1393

Room temperature memory operation of electron Y-branch switch with embedded quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; ELECTRONS; EMBEDDED SYSTEMS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; TWO DIMENSIONAL;

EID: 36448979974     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072341     Document Type: Article
Times cited : (1)

References (9)
  • 2
    • 0031039096 scopus 로고    scopus 로고
    • A silicon single-electron transistor memory operating at room temperature
    • 10.1126/science.275.5300.649 0036-8075
    • Guo, L.J., Leobandung, E., and Chou, S.Y.: ' A silicon single-electron transistor memory operating at room temperature ', Science, 1997, 275, p. 649-651 10.1126/science.275.5300.649 0036-8075
    • (1997) Science , vol.275 , pp. 649-651
    • Guo, L.J.1    Leobandung, E.2    Chou, S.Y.3
  • 3
    • 0000600589 scopus 로고    scopus 로고
    • Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
    • 10.1063/1.126065 0003-6951
    • Koike, K., Saitoh, K., Li, S., Sasa, S., Inoue, M., and Yano, M.: ' Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots ', Appl. Phys. Lett., 2000, 76, p. 1464-1466 10.1063/1.126065 0003-6951
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 1464-1466
    • Koike, K.1    Saitoh, K.2    Li, S.3    Sasa, S.4    Inoue, M.5    Yano, M.6
  • 4
    • 0000843969 scopus 로고    scopus 로고
    • Electrical detection of optically induced charge storage in self-assembled InAs quantum dots
    • 10.1063/1.122524 0003-6951
    • Finley, J.J., Skalitz, M., Arzberger, M., Zrenner, A., Böhm, G., and Abstreiter, G.: ' Electrical detection of optically induced charge storage in self-assembled InAs quantum dots ', Appl. Phys. Lett., 1998, 73, p. 2618-2620 10.1063/1.122524 0003-6951
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2618-2620
    • Finley, J.J.1    Skalitz, M.2    Arzberger, M.3    Zrenner, A.4    Böhm, G.5    Abstreiter, G.6
  • 5
    • 79955995782 scopus 로고    scopus 로고
    • Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots
    • 10.1063/1.1507607 0003-6951
    • Schliemann, A., Worschech, L., Reitzenstein, S., Kaiser, S., and Forchel, A.: ' Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots ', Appl. Phys. Lett., 2002, 81, p. 2115-2117 10.1063/1.1507607 0003-6951
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 2115-2117
    • Schliemann, A.1    Worschech, L.2    Reitzenstein, S.3    Kaiser, S.4    Forchel, A.5
  • 6
    • 0032614415 scopus 로고    scopus 로고
    • Self-gating effect in the electron Y-branch switch
    • 0031-9007
    • Wesström, J.-O.J.: ' Self-gating effect in the electron Y-branch switch ', Phys. Rev. Lett., 1999, 82, p. 2564-2567 0031-9007
    • (1999) Phys. Rev. Lett. , vol.82 , pp. 2564-2567
    • Wesström, J.-O.J.1
  • 7
    • 0013116660 scopus 로고    scopus 로고
    • Capacitive-coupling-enhanced switching gain in an electron Y-branch switch
    • 10.1103/PhysRevLett.89.226804 0031-9007
    • Reitzenstein, S., Worschech, L., Hartmann, P., Kamp, M., and Forchel, A.: ' Capacitive-coupling-enhanced switching gain in an electron Y-branch switch ', Phys. Rev. Lett., 2002, 89, p. 226804 10.1103/PhysRevLett.89.226804 0031-9007
    • (2002) Phys. Rev. Lett. , vol.89 , pp. 226804
    • Reitzenstein, S.1    Worschech, L.2    Hartmann, P.3    Kamp, M.4    Forchel, A.5
  • 8
    • 33646704015 scopus 로고    scopus 로고
    • Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dots
    • 10.1049/el:20060312 0013-5194
    • Müller, C.R., Worschech, L., and Forchel, A.: ' Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dots ', Electron. Lett., 2006, 42, p. 603-604 10.1049/el:20060312 0013-5194
    • (2006) Electron. Lett. , vol.42 , pp. 603-604
    • Müller, C.R.1    Worschech, L.2    Forchel, A.3
  • 9
    • 33947225545 scopus 로고    scopus 로고
    • Bias voltage controlled memory effect in in-plane quantum-wire transistors with embedded quantum dots
    • 10.1109/LED.2006.886325 0741-3106
    • Müller, C.R., Worschech, L., Schliemann, A., and Forchel, A.: ' Bias voltage controlled memory effect in in-plane quantum-wire transistors with embedded quantum dots ', IEEE Electron Device Lett., 2006, 27, p. 955-958 10.1109/LED.2006.886325 0741-3106
    • (2006) IEEE Electron Device Lett. , vol.27 , pp. 955-958
    • Müller, C.R.1    Worschech, L.2    Schliemann, A.3    Forchel, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.