Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dots

Electronics Letters

Volumn 42, Issue 10, 2006, Pages 603-604

  Muller C R ^a   Worschech, L ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC POTENTIAL; HYSTERESIS; SEMICONDUCTOR JUNCTIONS;

MONOLITHIC MEMORY DEVICE; SELF GATING; THRESHOLD HYSTERESIS; YTTRIUM BRANCH SWITCH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646704015     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060312     Document Type: Article

References (8)

1. Guo, L.J., Leobandung, E., and Chou, S.Y.: ' A silicon single-electron transistor memory operating at room temperature ', Science, 1997, 275, p. 649-651
2. Iannaccone, G., Trellakis, A., and Ravaioli, U.: ' Simulation of a quantum-dot flash memory ', J. Appl. Phys., 1998, 84, p. 5032-5036
3. Kohno, A., Murakami, H., Ikeda, M., Miyazaki, S., and Hirose, M.: ' Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors ', Jpn. J. Appl. Phys., 2001, 40, p. L721-L723
4. Ikeda, M., Shimizu, Y., Murakami, H., and Miyazaki, S.: ' Multiple-step electron charging in silicon-quantum-dot floating gate metal-oxide-semiconductor memories ', Jpn. J. Appl. Phys., 2003, 42, p. 4134-4137
5. Thean, A., and Leburton, J.P.: ' 3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices ', IEEE Electron Device Lett., 2001, 22, p. 148-150
6. Kim, D.W., Kim, T., and Benerjee, S.K.: ' Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics ', IEEE Trans. Electron Devices, 2003, 50, p. 1823-1829
7. Wesström, J.-O.J.: ' Self-gating effect in the electron Y-branch switch ', Phys. Rev. Lett., 1999, 82, p. 2564-2567
8. Reitzenstein, S., Worschech, L., Hartmann, P., Kamp, M., and Forchel, A.: ' Capacitive-coupling-enhanced switching gain in an electron Y-branch switch ', Phys. Rev. Lett., 2002, 89, 226804